Chiral topological excitons in the monolayer transition metal dichalcogenides
نویسندگان
چکیده
منابع مشابه
Chiral topological excitons in the monolayer transition metal dichalcogenides
We theoretically investigate the chiral topological excitons emerging in the monolayer transition metal dichalcogenides, where a bulk energy gap of valley excitons is opened up by a position dependent external magnetic field. We find two emerging chiral topological nontrivial excitons states, which exactly connects to the bulk topological properties, i.e., Chern number = 2. The dependence of th...
متن کاملTopological superconductivity in monolayer transition metal dichalcogenides
Theoretically, it has been known that breaking spin degeneracy and effectively realizing spinless fermions is a promising path to topological superconductors. Yet, topological superconductors are rare to date. Here we propose to realize spinless fermions by splitting the spin degeneracy in momentum space. Specifically, we identify monolayer hole-doped transition metal dichalcogenide (TMD)s as c...
متن کاملExciton formation in monolayer transition metal dichalcogenides.
Two-dimensional transition metal dichalcogenides provide a unique platform to study excitons in confined structures. Recently, several important aspects of excitons in these materials have been investigated in detail. However, the formation process of excitons from free carriers has yet to be understood. Here we report time-resolved measurements on the exciton formation process in monolayer sam...
متن کاملIntrinsic homogeneous linewidth and broadening mechanisms of excitons in monolayer transition metal dichalcogenides
The band-edge optical response of transition metal dichalcogenides, an emerging class of atomically thin semiconductors, is dominated by tightly bound excitons localized at the corners of the Brillouin zone (valley excitons). A fundamental yet unknown property of valley excitons in these materials is the intrinsic homogeneous linewidth, which reflects irreversible quantum dissipation arising fr...
متن کاملDefect-induced photoluminescence in monolayer semiconducting transition metal dichalcogenides.
It is well established that defects strongly influence properties in two-dimensional materials. For graphene, atomic defects activate the Raman-active centrosymmetric A1g ring-breathing mode known as the D-peak. The relative intensity of this D-peak compared to the G-band peak is the most widely accepted measure of the quality of graphene films. However, no such metric exists for monolayer semi...
متن کاملذخیره در منابع من
با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید
ژورنال
عنوان ژورنال: Scientific Reports
سال: 2017
ISSN: 2045-2322
DOI: 10.1038/srep42390